| PART |
Description |
Maker |
| EM6A9320BIB-4H EM6A9320BIB-5H |
4M x 32 bit DDR Synchronous DRAM (SDRAM)
|
Etron Technology, Inc.
|
| MC-45D16CD641KS MC-45D16CD641KS-C75 MC-45D16CD641K |
16 M-WORD BY 64-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
|
Elpida Memory
|
| MC-45D32CC721KFA-C80 MC-45D32CC721KFA-C75 |
32 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
Elpida Memory
|
| MC-45D32DC721KFA-C75 MC-45D32DC721KF-C80 MC-45D32D |
32 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
|
Elpida Memory
|
| IDT72T40108L6-7BB IDT72T40118L6-7BB IDT72T40118L6- |
64K x 40 TeraSync DDR FIFO, 2.5V
128K x 40 TeraSync DDR FIFO, 2.5V
2.5 VOLT HIGH-SPEED TeraSync?? DDR/SDR FIFO 40-BIT CONFIGURATION
16K x 40 TeraSync DDR FIFO, 2.5V
32K x 40 TeraSync DDR FIFO, 2.5V
|
IDT
|
| W942508CH-75 |
8M x 4 BANKS x 8 BIT DDR SDRAM 32M X 8 DDR DRAM, 0.75 ns, PDSO66
|
Winbond Electronics, Corp.
|
| DM74ALS161B DM74ALS162B DM74ALS162BM DM74ALS162BN |
Synchronous Four-Bit Decade Counter with Synchronous Clear
Synchronous Four-Bit Binary Counter with Synchronous Clear
Synchronous Four-Bit Counter
From old datasheet system
Synchronous Four-Bit Binary Counter with Asynchronous Clear
|
FAIRCHILD[Fairchild Semiconductor]
|
| IS61DDB21M36-250M3 IS61DDB22M18-250M3 |
36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 2) CIO Synchronous SRAMs
36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 2) CIO Synchronous SRAMs
|
Integrated Silicon Solution, Inc.
|
| M368L1713CTL-LB3 M368L1713CTL M368L1713CTL-CA2 M36 |
128MB DDR SDRAM MODULE (16Mx64 based on 16Mx8 DDR SDRAM) Unbuffered 184pin DIMM 64-bit Non-ECC/Parity
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| IS61DDB42M36-250M3 IS61DDB42M36-250M3L IS61DDB42M3 |
72 Mb (2M x 36 & 4M x 18) DDR-II (Burst of 4) CIO Synchronous SRAMs
|
Integrated Silicon Solution, Inc
|
| IS61DDB42M18-250M3 IS61DDB42M18 IS61DDB41M36-250M3 |
36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 4) CIO Synchronous SRAMs
|
Integrated Silicon Solution, Inc
|
